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Defect engineering the electronic and optoelectronic properties of heterostructure of MoSSe/PbS (111)

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成果类型:
期刊论文
作者:
Zhang, Shenrui;Huang, Zongyu*;Liu, Huating;Zhong, Jianxin;Qi, Xiang
通讯作者:
Huang, Zongyu;Liu, HT;Huang, ZY
作者机构:
[Liu, Huating; Huang, Zongyu; Qi, Xiang; Zhang, Shenrui; Huang, ZY; Zhong, Jianxin] Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.
[Liu, Huating] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
[Huang, Zongyu; Huang, ZY] Hunan Univ, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China.
通讯机构:
[Liu, HT ; Huang, ZY] X
[Huang, ZY ] H
Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.
Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
Hunan Univ, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China.
语种:
英文
关键词:
photoelectronic properties;the first-principles calculations;vacancy defect
期刊:
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN:
0953-8984
年:
2023
卷:
35
期:
36
基金类别:
Scientific Research Fund of Hunan Provincial Education Department [21A0080, 21B0128]; Provincial Natural Science Foundation of Hunan [2022JJ30553]; Hunan Key Laboratory of Two-Dimensional Materials [2018TP1010]; Program of Changjiang Scholars and Innovative Research Team in University [IRT-17R91]
机构署名:
本校为通讯机构
院系归属:
电气与电子工程学院
摘要:
The structural, electronic and optical properties of MoSSe, PbS (111) and MoSSe/PbS (111) have been studied by the first-principles calculations, and the effect of V(S)on electronic and optical properties of MoSSe/PbS (111). When PbS (111) is stacked on MoSSe, an internal electric field and ohmic contact are formed at interlayer, and exhibited metal property. Compared with MoSSe and PbS (111) monolayer, MoSSe/PbS (111) heterostructure has higher absorption coefficients. Further analysis shows that this can be attributed to the orbital hybridization between the heterostructure layers. When V(S)...

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