The pursuit of ferromagnetic semiconductors capable of realizing the quantum anomalous hall effect (QAHE) at room temperature holds significant importance for the development and application of spintronic devices. However, current experimental realizations of QAHE in 2D materials are often limited by extremely low TC and minute nontrivial bandgaps. Herein, based on first-principles calculations, a stable QAHE system that can exist at room temperature is successfully achieved by adsorbing N and O atoms on opposite sides of arsenene. According to the computational results, this novel 2D O & horb...
