期刊论文、会议论文

Chen Liangyan

英文

Applied Mechanics and Materials

1660-9336

2012

130-134

860-863

2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)论文集

2011-09-23

合肥

[Chen Liangyan;Chen Xiqu] Whan Polytech Univ, Dept Math & Phys, Wuhan, Hubei, Peoples R China.^[Zhang Daoli] Huazhong Univ Sci & Technol, Dept elect sci & technol, Wuhan, Hubei, Peoples R China.

新加坡国际计算机科学与信息技术协会

Zhao, H

KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, SWITZERLAND

TRANS TECH PUBLICATIONS LTD

978-3-03785-286-6

10.4028/www.scientific.net/AMM.130-134.860

本校为第一且通讯机构

Theoretical studies of ZnSe epitaxy growth on GaA (001) surface were performed with first principle calculation, the bonding energy of absorbing monolayer atoms, charge and binding properties of the interface atoms were investigated to account for the growth of ZnSe films on different GaAs(001) surface. And it's concluded that As-terminated stable AsGa(001) substrate placed in Zn atmosphere, with absorption of Zn atoms on AsGa(001) substrate, which can be a counterweight to form a neutral GaAs/ZnSe interface, may be helpful in reducing the defects of the ZnSe epitaxy growth on GaAs(001) substr...