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The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

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成果类型:
期刊论文
作者:
Wen, Guozhi*;Zeng, Xiangbin;Li, Xianghu
通讯作者:
Wen, Guozhi
作者机构:
[Wen, Guozhi; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.
[Zeng, Xiangbin] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China.
通讯机构:
[Wen, Guozhi] W
Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.
语种:
英文
关键词:
Amorphous films;Annealing;Chemical analysis;Chemical bonds;Crystalline materials;Fourier transform infrared spectroscopy;Hydrogenation;Light absorption;Microstructural evolution;Nanocrystals;Plasma CVD;Plasma enhanced chemical vapor deposition;Semiconductor quantum dots;Silicon carbide;Structural properties;Synthesis (chemical);X ray diffraction;X ray photoelectron spectroscopy;Annealing temperatures;Bonding configurations;Chemical composition analysis;Crystalline volume fraction;Diffraction spectroscopy;Fourier transform infrared absorption;Hydrogenated silicon carbide;Non-stoichiometric;Amorphous silicon
期刊:
Journal of Electronic Materials
ISSN:
0361-5235
年:
2016
卷:
45
期:
8
页码:
4432-4440
基金类别:
The project of Wuhan Polytechnic University#&#&#2015RZ18
机构署名:
本校为第一且通讯机构
院系归属:
电气与电子工程学院
摘要:
Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffracti...

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