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Resistance hysteresis loop characteristic analysis of VO2thin film for high sensitive microbolometer

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成果类型:
期刊论文
作者:
Chen, Xiqu*;Lv, Qiang
通讯作者:
Chen, Xiqu
作者机构:
[Lv, Qiang; Chen, Xiqu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan, Peoples R China.
通讯机构:
[Chen, Xiqu] W
Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan, Peoples R China.
语种:
英文
关键词:
Bolometers;Electric resistance;Hysteresis;Hysteresis loops;Temperature sensors;Vanadium dioxide;Infrared responsivity;Loop characteristics;Measured results;Numerical calculation;Operating temperature;Resistance characteristics;Thermo sensitive;VO2 thin film;Thin films
期刊:
Optik
ISSN:
0030-4026
年:
2015
卷:
126
期:
20
页码:
2718-2722
基金类别:
This work was supported by China Hubei Provincial Science & Technology Department (ID: 2014CFB882 ).
机构署名:
本校为第一且通讯机构
院系归属:
电气与电子工程学院
摘要:
Based on the Preisach model for hysteresis loop, the resistance hysteresis loop characteristic of thermosensitive VO2 thin film is theoretically analyzed. The resistance characteristics dependent on temperature in the resistance hysteresis loop can be obtained through theoretical numerical calculation, and the numerical calculated results are in good agreement with the experimentally measured results of some VO2 thin film samples in our laboratory. The resistance characteristics calculated results can be utilized to predict the infrared respons...

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