Hydrogenated amorphous silicon carbide thin films (a-SiC: H) were deposited by decomposition of SiH4 and CH4 gas mixtures at 200 degrees C. Chemical bonding configuration measurements by Fourier transform infrared absorption spectroscopy show that there are SiHn (n=1,2,3), C-SiH, non-hydrogen Si-C, Si-CH3, and CHn (n=1,2,3) radicals in the as-grown sample. Raman scattering measurement reveals a broad peak located at about 479.4 cm(-1) and a weak protuberance at 970.6 cm(-1). These demonstrate that there aren't any cryst...
