Non-stoichiometric hydrogenated amorphous silicon carbide thin films (α-SiC:H) were deposited by plasma-enhanced chemical vapor deposition. The samples were subsequently post-annealed at 750, 900, 1050, and 1200 °C, respectively. Photoluminescence (PL) was measured by fluorescence spectrometer at room temperature. Infrared absorption was carried out by Fourier transform infrared absorption. Chemical compositions were analyzed by X-ray photoelectron spectroscopy. The synthesis of silicon quantum dots (Si-QDs) was characterized by Raman scatter...
