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Study on Interfacial Diffusion Mechanism of The Nonstoichiometric ratio TiN0.3 and AlN composite in the process of sintering

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成果类型:
会议论文
作者:
He, ZhanWen*;Wang, M. Z.
通讯作者:
He, ZhanWen
作者机构:
[He, ZhanWen] Wuhan Polytech Univ, Wuhan Polytech, Sch Mech Engn, Wuhan, Hubei, Peoples R China.
[Wang, M. Z.] Yanshan Univ, Key Lab Metastable Mat Sci & Technol, Qinhuangdao, Peoples R China.
通讯机构:
[He, ZhanWen] W
Wuhan Polytech Univ, Wuhan Polytech, Sch Mech Engn, Wuhan, Hubei, Peoples R China.
语种:
英文
关键词:
non-stoichiometric TiNx;Interface densification;AlN;Covalent compounds
期刊:
2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT)
年:
2018
页码:
1198-1201
会议名称:
第十九届国际电子封装技术会议(ICEPT 2018)
会议论文集名称:
第十九届国际电子封装技术会议(ICEPT 2018)论文集
会议时间:
2018-08-08
会议地点:
上海
会议主办单位:
Inst Microelectron Chinese Acad Sci
会议赞助商:
中国电子学会<&wdkj&>国际电气电子工程师协会<&wdkj&>中科院
出版地:
345 E 47TH ST, NEW YORK, NY 10017 USA
出版者:
IEEE
ISBN:
978-1-5386-6386-8
基金类别:
Plan Project of Wuhan Polytechnic University [2017y01]
机构署名:
本校为第一且通讯机构
院系归属:
机械工程学院
摘要:
Covalent compounds have strong covalent bond, thus showing high melting point, high hardness, high temperature resistance, corrosion resistance, wear resistance and other excellent performance, is widely applied to the field of refractory materials and wear-resistant materials. But at the same time this kind of material also has the problem of poor toughness and difficulty in sintering. In this article, by adding the nonstoichiometric ratio to the AlN titanium nitride, a new method were studied to improve the sintering property and reduce the sintering temperature through vacancy diffusion and...

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