Local strain engineering in Janus MoSSe nanoribbons induces tunable electronic structures and remarkable magnetic moments

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成果类型：

期刊论文

作者：

Liu, Huating;Huang, Zongyu;Deng, Jiao;Xue, Xiongxiong;Wang, Ziyu;...

通讯作者：

Huang, ZY

作者机构：

[Liu, Huating] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.

[Huang, Zongyu; Qi, Xiang; Xue, Xiongxiong; Zhong, Jianxin; Huang, ZY; Liu, Huating] Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.

[Huang, Zongyu; Huang, ZY] Hunan Univ, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China.

[Deng, Jiao] Hunan Inst Sci & Technol, Sch Phys & Elect Sci, Yueyang 414000, Hunan, Peoples R China.

[Wang, Ziyu] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China.

通讯机构：

[Huang, ZY ] X

Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.

Hunan Univ, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China.

语种：

英文

关键词：

strain engineering;Janus nanoribbons;electronic structures;magnetic moment

期刊：

Journal of Physics D: Applied Physics

ISSN：

0022-3727

年：

2023

卷：

期：

页码：

365302

DOI：

10.1088/1361-6463/acd462

基金类别：

National Key R&D Program of the MOST of China [2022YFA1602602]; National Natural Science Foundation of China [11874316, 12274359]; Scientific Research Fund of Hunan Provincial Education Department [21A0080, 21B0128]; Provincial Natural Science Foundation of Hunan [2022JJ30553]; Hunan Key Laboratory of Two-Dimensional Materials [2018TP1010]; Program of Changjiang Scholars and Innovative Research Team in University [IRT-17R91]; Suzhou Key Industrial Technology innovation project [SYG201921]

机构署名：

本校为第一机构

院系归属：

电气与电子工程学院

摘要：

Local strain, as a small degree and single direction strain method, can effectively regulate the structures and electronic properties of armchair Janus MoSSe nanoribbon, so that the system can be transformed from the original 0.467 eV indirect band gap into 0.259 eV (3-zig), 0.117 eV (3-arm), 0.080 eV (6-arm) and 0.139 eV (9-zig) direct band-gap semiconductor according to the different strain degrees and directions. Compared with traditional MoS2 and MoSe2 nanoribbons, Janus MoSSe nanoribbon shows relatively stable band structure under local st...

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Local strain engineering in Janus MoSSe nanoribbons induces tunable electronic structures and remarkable magnetic moments

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