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Effect of S Vacancy and Interlayer Interaction on the Electronic and Optical Properties of MoS2/WSe2 Heterostructure

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成果类型:
期刊论文
作者:
Zhen, Xuan;Liu, Huating;Liu, Fei;Zhang, Shenrui;Zhong, Jianxin;...
通讯作者:
Zongyu Huang
作者机构:
[Zhen, Xuan; Huang, Zongyu; Liu, Fei; Zhang, Shenrui; Zhong, Jianxin; Liu, Huating] Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.
[Liu, Huating] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
[Huang, Zongyu] Hunan Univ, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China.
通讯机构:
[Zongyu Huang] S
School of Physics and Optoelectronic, Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan, People’s Republic of China<&wdkj&>Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha, People’s Republic of China
语种:
英文
关键词:
MoS2;WSe2 heterostructure;S vacancy;interlayer interaction;electronic and optical properties
期刊:
Journal of Electronic Materials
ISSN:
0361-5235
年:
2023
卷:
52
期:
2
页码:
1186-1192
基金类别:
Scientific Research Fund of Hunan Provincial Education Department [21A0080]; Provincial Natural Science Foundation of Hunan [2022JJ30553]; National Natural Science Foundation of China [11874315]; Hunan Key Laboratory of Two-Dimensional Materials [2018TP1010]; Suzhou key industrial technology innovation project [SYG201921]; Program of Changjiang Scholars and Innovative Research Team in University [IRT-17R91]
机构署名:
本校为其他机构
院系归属:
电气与电子工程学院
摘要:
The van der Waals (vdWs) heterostructure retains some excellent properties of monolayer transition metal dichalcogenides (TMDs), and has a significant improvement in performance, which is anticipated to play an important role in optoelectronic devices. S vacancy and interlayer interaction act together to influence the properties of the system. In this work, based on first-principles calculations, the effect of S vacancy on the electronic and optical properties of the MoS2/WSe2 heterostructure were investigated. The calculation demonstrated that a single S vacancy introduces defect states betwe...

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