The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

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成果类型：

期刊论文

作者：

Wen, Guozhi*;Zeng, Xiangbin;Li, Xianghu

通讯作者：

Wen, Guozhi

作者机构：

[Wen, Guozhi; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.

[Zeng, Xiangbin] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China.

通讯机构：

[Wen, Guozhi] W

Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.

语种：

英文

关键词：

Amorphous films;Annealing;Chemical bonds;Deposition;High resolution transmission electron microscopy;Hydrogenation;Light absorption;Nanocrystals;Plasma CVD;Plasma enhanced chemical vapor deposition;Semiconductor quantum dots;Silicon;Silicon carbide;Temperature;Thin films;X ray diffraction;X ray photoelectron spectroscopy;Annealed samples;Annealing temperatures;Bonding configurations;Chemical bonding configuration;Fourier transform infrared absorption;Plasma enhanced chemical vapor depositions (PE CVD);Silicon quantum dots;X-ray diffraction spectroscopy;Amorphous silicon

期刊：

Journal of Non-Crystalline Solids

ISSN：

0022-3093

年：

2016

卷：

441

页码：

10-15

DOI：

10.1016/j.jnoncrysol.2016.03.006

基金类别：

This work is supported by projects of Wuhan Polytechnic University (Grant No. 2013y08 and 2015RZ18 ). The authors would like to thank Analytical and Testing Center of Huazhong University of Science and Technology.

机构署名：

本校为第一且通讯机构

院系归属：

电气与电子工程学院

摘要：

Hydrogenated amorphous silicon carbide thin films (a-SiC:H) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and thermal annealed at temperatures of 900, 1050, and 1200 °C, respectively. The influence of annealing temperature on the silicon quantum dot (QD) synthesis was investigated by Raman scattering spectroscopy, X-ray diffraction spectroscopy, and high-resolution transmission electron microscopy. The influence of annealing temperature on the chemical bonding configurations was revealed by Fourier transform infrared absor...

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The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

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