期刊论文

Chen, JB

英文

Materials

1996-1944

2023

16

9

3504-

10.3390/ma16093504

Conceptualization, J.C. and B.L.; methodology, J.C.; software, B.L.; validation, J.C., B.L. and M.H.; formal analysis, J.C. and M.H.; investigation, S.H. and S.Y.; resources, B.L. and S.H.; data curation, S.H. and S.Y.; writing—original draft preparation, J.C. and B.L.; writing—review and editing, J.C. and B.L.; visualization, Y.W. and J.Y.; supervision, Y.W. and J.Y.; project administration, Y.W. and J.Y.; funding acquisition, J.C. and J.Y. All authors have read and agreed to the published version of the manuscript. This paper was supported by the Science and Technology Project of Science and Technology Department of Hubei Province (No. 2022EHB020).

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The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a cr...