Magnon Chaos in PT-Symmetric Cavity Magnomechanics
作者：
Wang, Mei* ;Zhang, Duo;Li, Xiang-Hu;Wu, Yu-Ying;Sun, Zhao-Yu*
期刊：
IEEE PHOTONICS JOURNAL ,2019年11(3):1-8 ISSN：1943-0655
通讯作者：
Wang, Mei;Sun, Zhao-Yu
作者机构：
[Zhang, Duo; Li, Xiang-Hu; Sun, Zhao-Yu; Wang, Mei; Wu, Yu-Ying] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430040, Hubei, Peoples R China.
通讯机构：
[Wang, M; Sun, ZY] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430040, Hubei, Peoples R China.
关键词：
PT-symmetry;Kerr nonlinearity;magnetostrictive interaction;microwave cavity;magnon chaos
摘要：
Here, we research a novel cavity magnomechanical system, where the magnon mode with Kerr nonlinearity driven by a microwave field couples to a phonon mode with a magneostrictive nonlinear interaction (radiation pressure-like). Based on these nonlinear properties, we numerically demonstrate magnon chaos in the PT-symmetry and PT-symmetry broken regimes in the system. In the PT-symmetry broken phase, the magnon-chaos driving threshold is lowered to a rather low levels benefited from the enhancement of the system nonlinearities. Moreover, by expenediently manipulating the phase transition between PT-symmetry and PT-symmetry broken regimes, we can switch the system between into and out of chaotic regimes. Our work may broaden the cavity magnomehcnaics and provide a promising application for magnetic chaos-related security communications. © 2009-2012 IEEE.
语种：
英文
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带本征薄层硅异质结HIT太阳能电池的研究与发展
作者：
文国知;范吉军;李相虎
期刊：
武汉轻工大学学报 ,2017年36(2):1-7 ISSN：2095-7386
作者机构：
武汉轻工大学 电气与电子工程学院,湖北 武汉,430023;[李相虎; 范吉军; 文国知] 武汉轻工大学
关键词：
硅异质结;本征层;钝化;转换效率;太阳能电池
摘要：
介绍了带本征薄层硅异质结HIT太阳能电池的研究与产业化进程。阐述了提高硅异质结HIT太阳能电池光电转换效率的关键技术,如单晶硅片表面的织构化技术、异质结界面的钝化技术、栅电极制备技术和双面电池技术。最后,介绍了基于量子限域效应的硅量子点异质结HIT太阳能电池的设计理论及研究进展。
语种：
中文
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The influence of local SiC bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films
作者：
Wen, Guozhi* ;Fan, Jijun;Li, Xianghu;Liu, Yuanyuan
期刊：
Journal of Non-Crystalline Solids ,2017年463:50-55 ISSN：0022-3093
通讯作者：
Wen, Guozhi
作者机构：
[Fan, Jijun; Wen, Guozhi; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.;[Liu, Yuanyuan] Wuhan Polytech Univ, Lib, 68 South Rd, Wuhan 430023, Hubei, Peoples R China.
通讯机构：
[Wen, Guozhi] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.
关键词：
Annealing;Chemical analysis;Chemical bonds;Graphene quantum dots;Hydrogenation;Infrared absorption;Light absorption;Nanocrystals;Photoluminescence;Plasma confinement;Plasma CVD;Plasma enhanced chemical vapor deposition;Semiconductor quantum dots;Silicon;Silicon carbide;Spectrometers;Thin films;X ray photoelectron spectroscopy;Chemical bondings;Chemical compositions;Fluorescence spectrometers;Fourier transform infrared absorption;Non-stoichiometric;Raman scattering spectroscopy;Silicon carbide thin film;Silicon quantum dots;Amorphous silicon
摘要：
Non-stoichiometric hydrogenated amorphous silicon carbide thin films (α-SiC:H) were deposited by plasma-enhanced chemical vapor deposition. The samples were subsequently post-annealed at 750, 900, 1050, and 1200 °C, respectively. Photoluminescence (PL) was measured by fluorescence spectrometer at room temperature. Infrared absorption was carried out by Fourier transform infrared absorption. Chemical compositions were analyzed by X-ray photoelectron spectroscopy. The synthesis of silicon quantum dots (Si-QDs) was characterized by Raman scattering spectroscopy and directly by high-resolution transmission electron microscope. PL measurements revealed that there were complicatedly shifted sub-bands upon the thermal annealing temperature increase. The behaviors of these shifted sub-bands showed converse trends as that of the local Si[sbnd]C bonding densities. A possible influence for the PL by the evolvement of the local Si[sbnd]C bonding densities and the synthesis of Si-QDs in the α-SiC:H samples is supposed. © 2017 Elsevier B.V.
语种：
英文
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The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix
作者：
Wen, Guozhi* ;Zeng, Xiangbin;Li, Xianghu
期刊：
Journal of Non-Crystalline Solids ,2016年441:10-15 ISSN：0022-3093
通讯作者：
Wen, Guozhi
作者机构：
[Wen, Guozhi; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.;[Zeng, Xiangbin] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China.
通讯机构：
[Wen, Guozhi] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.
关键词：
Amorphous films;Annealing;Chemical bonds;Deposition;High resolution transmission electron microscopy;Hydrogenation;Light absorption;Nanocrystals;Plasma CVD;Plasma enhanced chemical vapor deposition;Semiconductor quantum dots;Silicon;Silicon carbide;Temperature;Thin films;X ray diffraction;X ray photoelectron spectroscopy;Annealed samples;Annealing temperatures;Bonding configurations;Chemical bonding configuration;Fourier transform infrared absorption;Plasma enhanced chemical vapor depositions (PE CVD);Silicon quantum dots;X-ray diffraction spectroscopy;Amorphous silicon
摘要：
Hydrogenated amorphous silicon carbide thin films (a-SiC:H) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and thermal annealed at temperatures of 900, 1050, and 1200 °C, respectively. The influence of annealing temperature on the silicon quantum dot (QD) synthesis was investigated by Raman scattering spectroscopy, X-ray diffraction spectroscopy, and high-resolution transmission electron microscopy. The influence of annealing temperature on the chemical bonding configurations was revealed by Fourier transform infrared absorption microscopy. The element ratios of the as-deposited sample were deduced by X-ray photoelectron spectroscopy. Results reveal that the samples are in silicon-rich nature. Silicon in the as-deposited sample and the 900°C annealed sample are amorphous. When the annealing temperature is increased to 1050°C, crystal silicon QDs have come into being. The calculated number density is about 2.15 ± 0.03 × 1012 cm- 2 and more than 80 ± 3% of the silicon QDs fall within a narrow size range of 2-3 nm. When the annealing temperature is increased to 1200°C, the average size of crystal silicon QDs is tuned from 2.6 to 3.2 nm, while the crystallinity is enhanced from 56.7 ± 2.5 to 67.1 ± 1.5%. We attribute the influence of annealing temperature on the synthesis of silicon QDs to be dependent on the evolution of chemical bonding configurations and the agglomeration of silicon atoms from the host matrix. © 2016 Elsevier B.V. All rights reserved.
语种：
英文
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A new temperature compensation method for microbolometric focal plane array
作者：
Chen, Xiqu
* ;Fang, Chao;Li, Xianghu;Zhan, Bifu
（ ;He, Qun
期刊：
Optik ,2016年127(18):7132-7136 ISSN：0030-4026
通讯作者：
Chen, Xiqu
作者机构：
[Zhan, Bifu; Fang, Chao; Chen, Xiqu; He, Qun; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan, Peoples R China.
通讯机构：
[Chen, Xiqu] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan, Peoples R China.
关键词：
Bias voltage;Bolometers;Focal plane arrays;Focusing;Temperature distribution;Thermography (temperature measurement);Bias;Different substrates;Heat balance equations;Low-power consumption;Microbolometer;Substrate temperature;Temperature compensation;Voltage responsivity;Temperature sensors
摘要：
Based on the analysis of the physical thermal model for a microbolometer under pulse bias, a new temperature compensation method for microbolometric focal plane array is proposed to compensate the substrate temperature fluctuation in microbolometric array. The self-heating and infrared responding voltage expressions of the microbolometer under pulse current bias are derived from the heat balance equation of the physical thermal model for the microbolometer, and these two expressions indicate that the microbolometer self-heating and infrared voltage responsivity expressions are dependent on the substrate temperature of the microbolometer with some other constant characteristic parameters. Through the obtained expressions, different pulse bias currents are provided to the microbolometer and its corresponding blind element at different substrate temperatures to get the same voltage responsivity of the microbolometer at different ambient temperatures. The proposed temperature compensation method can be utilized for a microbolometric focal plane array with low-power consumption and high temperature-resolution. © 2016 Elsevier GmbH
语种：
英文
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The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films
作者：
Wen, Guozhi* ;Zeng, Xiangbin;Li, Xianghu
期刊：
Journal of Electronic Materials ,2016年45(8):4432-4440 ISSN：0361-5235
通讯作者：
Wen, Guozhi
作者机构：
[Wen, Guozhi; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.;[Zeng, Xiangbin] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China.
通讯机构：
[Wen, Guozhi] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Hubei, Peoples R China.
关键词：
Amorphous films;Annealing;Chemical analysis;Chemical bonds;Crystalline materials;Fourier transform infrared spectroscopy;Hydrogenation;Light absorption;Microstructural evolution;Nanocrystals;Plasma CVD;Plasma enhanced chemical vapor deposition;Semiconductor quantum dots;Silicon carbide;Structural properties;Synthesis (chemical);X ray diffraction;X ray photoelectron spectroscopy;Annealing temperatures;Bonding configurations;Chemical composition analysis;Crystalline volume fraction;Diffraction spectroscopy;Fourier transform infrared absorption;Hydrogenated silicon carbide;Non-stoichiometric;Amorphous silicon
摘要：
Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1nm and 5.6nm, the number densities are as high as 1.7×1012cm−2 and 3.2×1012cm−2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices. © 2016, The Minerals, Metals & Materials Society.
语种：
英文
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基于储氢合金的太阳能制冷系统理论研究
作者：
李定海;李相虎;范吉军
期刊：
建筑工程技术与设计 ,2016年(34):1665 ISSN：2095-6630
作者机构：
武汉轻工大学电气与电子工程学院 湖北武汉 430023;[李定海; 李相虎; 范吉军] 武汉轻工大学
关键词：
金属氢化物;太阳能;吸附制冷
摘要：
依据金属氢化物的特征,指出一种新的塌秧能吸附式制冷循环体系;介绍了体系结构形式,建立了体系能量转化和分析模型,并对组成体系的各部分做了研究;依据具体的例子,计算了体系各不见得效率和损失,结果证明,体系有着很好的节能功能,体系的改良要以太阳能辐射的量为标准,来提高金属氢化物体系中的氢气转化率为目标.体系改良的另一方向是发展和其他太阳能利用技术结合的复合式体系.
语种：
中文
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Dielectric relaxation measurements in La1.94Ba0.06Mo2-yWyO9-delta (y=0, 1.0) Oxide-ion Conductors
作者：
Li, Dan* ;Wang, Bo;Gong, Pei;Li, Jie;Li, Xianghu
期刊：
Applied Mechanics and Materials ,2014年662:20-23 ISSN：1660-9336
通讯作者：
Li, Dan
作者机构：
[Li, Dan; Wang, Bo; Gong, Pei; Li, Jie; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li, Dan] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议名称：
2nd International Conference on Mechanical Engineering, Civil Engineering and Material Engineering, MECEM 2014
会议时间：
27 September 2014 through 28 September 2014
会议地点：
Wuhan, PEOPLES R CHINA
会议主办单位：
[Li, Dan;Wang, Bo;Gong, Pei;Li, Jie;Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Applied Mechanics and Materials
关键词：
Dielectric relaxation;La2Mo2O9;Oxide-ion conductor;Phase transition
摘要：
<jats:p>The influence of barium doping on the oxygen-ion diffusion and phase transition in the La<jats:sub>2</jats:sub>Mo<jats:sub>2</jats:sub><jats:sub>-</jats:sub><jats:sub>y</jats:sub>W<jats:sub>y</jats:sub>O<jats:sub>9</jats:sub><jats:sub>-</jats:sub><jats:sub>δ</jats:sub> (y=0, 1.0) oxide-ion conductors has been systematically investigated via dielectric techniques. In the Ba-doped La<jats:sub>2</jats:sub>Mo<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub> samples there are only two dielectric relaxation peaks P<jats:sub>d1</jats:sub> and P<jats:sub>d2</jats:sub>, which are associated with the short-distance diffusion of oxygen vacancies. But in the Ba-doped La<jats:sub>2</jats:sub>MoWO<jats:sub>9</jats:sub> members, three peaks are detected, including peak P<jats:sub>d1</jats:sub>, P<jats:sub>d2</jats:sub>, and peak P<jats:sub>h</jats:sub>. The last is associated with the phase transition process from the static disordered state to the dynamic disordered state of oxygen ion/vacancy distribution.</jats:p>
语种：
英文
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Magnetoresistance of nanostructured Sr2 FeMoO6 / CeO2 composites
作者：
Li, Xianghu* ;Li, Dan;Xiao, Dongwu
期刊：
Advanced Materials Research ,2012年507:44-47 ISSN：1022-6680
通讯作者：
Li, Xianghu
作者机构：
[Li, Dan; Xiao, Dongwu; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li, Xianghu] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议名称：
International Conference on Sport, Arts Materials and Management Science, SAMMS 2012
会议时间：
4 May 2012 through 6 May 2012
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li, Xianghu;Li, Dan;Xiao, Dongwu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Advanced Materials Research
关键词：
Double perovskite;Sol-gel method;Sr 2FeMoO 6
摘要：
<jats:p>(Sr<jats:sub>2</jats:sub>FeMoO<jats:sub>6</jats:sub>)<jats:sub>1-x</jats:sub>/(CeO<jats:sub>2</jats:sub>)<jats:sub>x</jats:sub>composites with nanosized crystallite were prepared by Sr<jats:sub>2</jats:sub>FeMoO<jats:sub>6</jats:sub>obtained from the sol-gel method and nanosized CeO<jats:sub>2</jats:sub>powders. The magnetoresistance of composites increase with the CeO<jats:sub>2</jats:sub>increasing. And the MR ratio at 10 K is 1.23%, and 2.48% for the x = 0.05 and 0.2 samples with H = 1 kOe, which are 1.25 times and 2.53 times as large as that for pure Sr<jats:sub>2</jats:sub>FeMoO<jats:sub>6</jats:sub>, respectively. The enhanced magnetoresistance was attributed to the spin-dependent tunneling at the interface of grain boundaries.</jats:p>
语种：
英文
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Ionic conductivities and phase transition of La 2Mo 2-xAl xO 9-δ
作者：
Li Xiang-hu* ;Li Dan
期刊：
Applied Mechanics and Materials ,2012年160:391-394 ISSN：1660-9336
通讯作者：
Li Xiang-hu
作者机构：
[Li Dan; Li Xiang-hu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li Xiang-hu] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li Xiang-hu;Li Dan] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Applied Mechanics and Materials
关键词：
Activation energy;Conductivity;Dielectric relaxation;La 2Mo 2O 9
摘要：
The influence of aluminum doping on the ionic conductivities and phase transition in the La<inf>2</inf>Mo<inf>2-x</inf>Al<inf>x</inf>O <inf>9-δ</inf>(x = 0.1, 0.2, 0.3) oxide-ion conductors has been investigated by XRD, DSC and dielectric relaxation measurements. The results indicate that the solubility of Al<sup>3+</sup> in La<inf>2</inf>Mo <inf>2</inf>O<inf>9</inf>sample is about 10mol%, Al3+ can not suppress the α/βphase transition in the La<inf>2</inf>Mo<inf>2</inf>O <inf>9</inf>, and the aluminum substituted La<inf>2</inf>Mo<inf>2</inf>O <inf>9</inf> has a higher conductivity in whole temperature than that of pure La<inf>2</inf>Mo<inf>2</inf>O<inf>9</inf>. ©(2012) Trans Tech Publications.
语种：
英文
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The oxygen-ion diffusion and phase transition in the La2Mo2-xWxO9 samples measured by internal friction method
作者：
Li Dan* ;Li Xiang-hu
期刊：
Applied Mechanics and Materials ,2012年160:8-11 ISSN：1660-9336
通讯作者：
Li Dan
作者机构：
[Li Dan; Li Xiang-hu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li Dan] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li Dan;Li Xiang-hu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Applied Mechanics and Materials
关键词：
Internal friction;La2Mo2O9;Oxygen-ion conductors
摘要：
The effects of tungsten doping on the oxygen-ion diffusion and the phase transition in La2Mo2-xWxO9 samples (x = 0.5, 0.75, 1.0, 1.2) were studied using internal friction method. The results show that two peaks were detected in the internal friction-temperature spectra in the La2Mo2-xWxO9 samples, the low-temperature relaxation peak is associated with oxygen ion diffusion, and the high-temperature peak is associated with a phase transition from the static disordered state to the dynamic disordered state of oxygen ion/vacancy distribution.
语种：
英文
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Reducibility of Oxide-Ion Conductors La2Mo2-YWyO9
作者：
Li, Dan* ;Li, Xianghu
期刊：
Advanced Materials Research ,2012年529(1058):524-527 ISSN：1022-6680
通讯作者：
Li, Dan
作者机构：
[Li, Dan; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li, Dan] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li, Dan;Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Advanced Materials Research
关键词：
Conductivity;Reducibility;Oxide-Ion Conductor;La2 Mo2-Y o9
摘要：
The reducibility of oxide-ion conductors La2Mo2-Ywyo9(y=0, 0.1) were studied in the reducing atmosphere of 5%H2+Ar by means of impedance spectroscopy measurement. 5% W-doped La2Mo2-Ywyo9 can enhance the conductivity and improve the reducibility in the temperature range from 275oC to 650oC.
语种：
英文
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Reducibility of La2Mo2-xGaxO9-delta oxide-ion conductors
作者：
Li Dan* ;Li Xiang-hu
期刊：
Advanced Materials Research ,2012年507:65-68 ISSN：1022-6680
通讯作者：
Li Dan
作者机构：
[Li Dan; Li Xiang-hu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
通讯机构：
[Li Dan] W;Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议名称：
International Conference on Sport, Arts Materials and Management Science, SAMMS 2012
会议时间：
4 May 2012 through 6 May 2012
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li Dan;Li Xiang-hu] Wuhan Polytech Univ, Sch Elect & Elect Engn, Wuhan 430023, Peoples R China.
会议论文集名称：
Advanced Materials Research
关键词：
Conductivity;La 2Mo 2O 9;Oxide-ion conductor;Reducibility
摘要：
<jats:p>In this paper, the ceramic samples of La<jats:sub>2</jats:sub>Mo<jats:sub>2</jats:sub>O<jats:sub>9</jats:sub>and La<jats:sub>2</jats:sub>Mo<jats:sub>2-x</jats:sub>Ga<jats:sub>x</jats:sub>O<jats:sub>9-δ</jats:sub>(x=0.1,0.2)were prepared by conventional solid-state reaction method. The reducibility of pure La2Mo2O9 and La<jats:sub>2</jats:sub>Mo<jats:sub>2-x</jats:sub>Ga<jats:sub>x</jats:sub>O<jats:sub>9-δ</jats:sub>(x=0.1,0.2) samples were studied in the reducing atmosphere of 5%H2+Ar by means of impedance spectroscopy measurement. For the La<jats:sub>2</jats:sub>Mo<jats:sub>2-x</jats:sub>Ga<jats:sub>x</jats:sub>O<jats:sub>9-δ</jats:sub>(x=0.1,0.2) the difference between the conductivity in the reducing atmosphere and the one in air is small, indicating that partial substitution of Ga for Mo is effective to improve the reducibility of La<jats:sub>2</jats:sub>Mo<jats:sub>2-x</jats:sub>Ga<jats:sub>x</jats:sub>O<jats:sub>9-δ</jats:sub>(x=0.1,0.2).</jats:p>
语种：
英文
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Reducibility of Oxide-Ion Conductors La2-XBaxMo2-YWyO9-δ
作者：
Dan Li;Xiang Hu Li
期刊：
Advanced Materials Research ,2012年548:91-93 ISSN：1022-6680
通讯作者：
Li, D.(dli@whpu.edu.cn)
作者机构：
[Li D.; Li X.] School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan 430023, China
通讯机构：
[Li, D.] S;School of Electrical and Electronic Engineering, , Wuhan 430023, China
会议名称：
3rd International Conference on Material and Manufacturing Technology, ICMMT 2012
会议时间：
5 May 2012 through 6 May 2012
关键词：
Conductivity;La 2Mo 2O 9;Oxide-ion conductor;Reducibility
摘要：
<jats:p>The reducibility of oxide-ion conductors La<jats:sub>2-x</jats:sub>Ba<jats:sub>x</jats:sub>Mo<jats:sub>2-y</jats:sub>W<jats:sub>y</jats:sub>O<jats:sub>9-δ</jats:sub>(x = 0, 0.06; y = 0, 0.1) were studied in the reducing atmosphere of 5%H2 + Ar by means of impedance spectroscopy measurement.. All substitutions can enhance the conductivity and improve the reducibility in the temperature range from 548 to 923 K. The double substitution of Ba and W has a better stabilizing effect than the single tungsten substitution.</jats:p>
语种：
英文
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氧离子导体La_2Mo_(2-y)Nb_yO_(9-δ)结构和导电性能研究
作者：
李相虎;李丹
期刊：
四川师范大学学报(自然科学版) ,2012年35(3):370-372 ISSN：1001-8395
作者机构：
武汉工业学院电气与电子工程学院,湖北武汉,430023;[李相虎; 李丹] 武汉工业学院
关键词：
氧离子导体;交流阻抗;电导率
摘要：
采用固相反应法合成了氧离子导体La_2Mo_(2-y)Nb_yO_(9-δ)(y=0,0.1,0.2,0.3),通过XRD和介电测量对氧离子导体进行结构和导电性能分析,结果表明,Nb~(5+)在La_2Mo_2O_9中的固溶度小于0.15 mol,且不能抑制纯La_2Mo_2O_9的α/β相转变,同时La_2Mo_(2-y)Nb_yO_(9-δ)(y=0.1,0.2)的电导率比纯La_2Mo_2O_9略有提高,但提高的幅度不大,原因可能是Nb~(5+)的离子半径与Mo~(6+)相当,并且氧化状态也差别不大,因此并没有引入较多的氧空位,从而使得固溶度和电导率增加的幅度不大.
语种：
中文
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Magnetic and Transport Properties of Nanostructured Sr(2)Fe(1-X)cr(x)moo(6) Double Perovskite Compounds
作者：
Li, Xianghu* ;Li, Dan;Xiao, Dongwu
期刊：
Advanced Materials Research ,2012年529:19-22 ISSN：1022-6680
通讯作者：
Li, Xianghu
作者机构：
[Li, Dan; Xiao, Dongwu; Li, Xianghu] Wuhan Polytech Univ, Sch Elect & Elect Engneering, Wuhan 430023, Peoples R China.
通讯机构：
[Li, Xianghu] W;Wuhan Polytech Univ, Sch Elect & Elect Engneering, Wuhan 430023, Peoples R China.
会议名称：
2nd International Conference on Optical, Electronic Materials and Applications 2012, OEMA 2012
会议时间：
25 May 2012 through 26 May 2012
会议地点：
Chongqing, PEOPLES R CHINA
会议主办单位：
[Li, Xianghu;Li, Dan;Xiao, Dongwu] Wuhan Polytech Univ, Sch Elect & Elect Engneering, Wuhan 430023, Peoples R China.
会议论文集名称：
Advanced Materials Research
关键词：
Double perovskite;Sol-gel method;Sr 2FeMoO 6
摘要：
The compounds of Fe substitution of Cr in nanotructured Sr<inf>2</inf>Fe<inf>1-x</inf>Cr<inf>x</inf>MoO<inf>6</inf> (0&lex&le0.2) double perovskite have been prepared by sol-gel method. And the x-ray diffraction patterns of the samples show that the samples are in nanometer range. All the samples show a paramagnetic to ferromagnetic transition with temperature, and the Curie temprature increase with the increasing of x. The resistivity of the samples decrease with the increasing of temprature, and increase with the increasing of x. ©(2012) Trans Tech Publications, Switzerland.
语种：
英文
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